是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.79 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 12.5 A |
最大漏源导通电阻: | 0.00975 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 3 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4392DY-T1-E3 | VISHAY |
获取价格 |
N-Channel Reduced Qg, Fast Switching WFET |
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SI4394DY | VISHAY |
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N-Channel Reduced Qdg, Fast Switching WFET |
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SI4394DY_05 | VISHAY |
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N-Channel 30-V (D-S) MOSFET |
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SI4394DY-E3 | VISHAY |
获取价格 |
N-Channel Reduced Qdg, Fast Switching WFET |
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SI4394DY-T1-E3 | VISHAY |
获取价格 |
N-Channel Reduced Qdg, Fast Switching WFET |
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SI4396DY | VISHAY |
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N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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SI4398DY-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 19A I(D), 20V, 1-Element, N-Channel, Silicon, Metal- |
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SI4398DY-T1-GE3 | VISHAY |
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Small Signal Field-Effect Transistor, 19A I(D), 20V, 1-Element, N-Channel, Silicon, Metal- |
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SI43A | ETC |
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SMT Power Inductor |
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SI4401BDY | VISHAY |
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P-Channel 40-V (D-S) MOSFET |
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