Datasheet > SI4392DY_06

SI4392DY_06

更新时间： 2024-09-28 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		开关
页数	文件大小	规格书
6页	101K
描述
N-Channel Reduced Qg, Fast Switching WFET®

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SI4392DY_06 数据手册

Si4392DY

Vishay Siliconix

N-Channel Reduced Q , Fast Switching WFET

FEATURES

PRODUCT SUMMARY

•

Extremely Low Q_gdWFET Technology for

Switching Losses

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

12.5

10.0

Available

0.00975 at V_GS= 10 V

0.01375 at V_GS= 4.5 V

•

RoHS*

COMPLIANT

100 % R_gTested

APPLICATIONS

•

High-Side DC/DC Conversion

- Notebook

- Server

SO-8

Top View

Ordering Information:

Si4392DY-T1

Si4392DY-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limits

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

12.5

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

Single Pulse Avalanche Current

Avalanche Energy

2.7

I_AS

E_AS

L = 0.1 mH

T_A= 25 °C

T_A= 70 °C

3.0

Maximum Power Dissipation^a

P_D

1.9

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

R_thJA

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 Board, t ≤ 10 sec.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72151

S-61013-Rev. E, 12-Jun-06

www.vishay.com

12 3 4 5 6

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