Datasheet > SI4378DY_RC

SI4378DY_RC

更新时间： 2024-09-27 06:11:35

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R-C Thermal Model Parameters

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SI4378DY_RC 数据手册

Si4378DY_RC

Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient Thermal Impedance curves for the

MOSFET.

R-C values for the electrical circuit in the Foster/Tank

and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION

Thermal Resistance (°C/W)

Foot

253.8192 m

4.1485

Junction to

RT1

Ambient

2.1646

Case

N/A

RT2

22.7237

31.7971

23.2083

RT3

6.6629

RT4

4.9847

Thermal Capacitance (Joules/°C)

Foot

Junction to

CT1

Ambient

20.8422 m

47.2729 m

2.0384

Case

N/A

18.9670

CT2

155.1850 m

257.9792 m

13.8749 m

CT3

CT4

3.7242

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

Document Number: 73820

Revision 02-Mar-06

www.vishay.com

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