Datasheet > SI4386DY

SI4386DY

更新时间： 2024-09-28 01:20:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	172K
描述
N-Channel Reduced Qg, Fast Switching MOSFET

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SI4386DY 数据手册

Si4386DY

Vishay Siliconix

N-Channel Reduced Q , Fast Switching MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Available

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

TrenchFET^®Gen II Power MOSFETs

PWM Optimized

0.007 at V_GS= 10 V

0.0095 at V_GS= 4.5 V

•

13.5

100 % R_gTested

APPLICATIONS

•

DC/DC Conversion for PC

SO-8

Top View

Ordering Information:Si4386DY-T1-E3 (Lead (Pb)-free)

Si4386DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Symbol

10 s

Steady State

Unit

Parameter

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

1.3

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

Single Pulse Avalanche Current

Avalanche Energy

2.8

I_AS

E_AS

L = 0.1 mH

T_A= 25 °C

3.1

1.47

Maximum Power Dissipation^a

P_D

T_A= 70 °C

0.95

T_J, T_stg

- 55 to 150

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

Steady State

Maximum Junction-to-Ambient (MOSFET)^a

Maximum Junction-to-Foot (Drain)

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 73109

S09-0226-Rev. D, 09-Feb-09

www.vishay.com

12 3 4 5 6 7 8

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