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SI4378DY-E3 PDF预览

SI4378DY-E3

更新时间: 2024-01-05 16:23:09
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管开关光电二极管
页数 文件大小 规格书
5页 57K
描述
N-Channel 20-V (D-S) MOSFET

SI4378DY-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):19 A最大漏源导通电阻:0.0027 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4378DY-E3 数据手册

 浏览型号SI4378DY-E3的Datasheet PDF文件第2页浏览型号SI4378DY-E3的Datasheet PDF文件第3页浏览型号SI4378DY-E3的Datasheet PDF文件第4页浏览型号SI4378DY-E3的Datasheet PDF文件第5页 
Si4378DY  
Vishay Siliconix  
New Product  
N-Channel 20-V (D-S) MOSFET  
FEATURES  
D Ultra Low On-Resistance Using High Density  
PRODUCT SUMMARY  
TrenchFETr Gen II Power MOSFET Technology  
D Qg Optimized  
VDS (V)  
rDS(on) (W)  
ID (A)  
D 100% Rg Tested  
APPLICATIONS  
0.0027 @ V = 4.5 V  
25  
22  
GS  
20  
0.0042 @ V = 2.5 V  
GS  
D Synchronous Rectification  
D Point-Of-Load  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
Ordering Information: Si4378DY—E3  
Si4378DY-T1—E3 (with Tape and Reel)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
20  
V
"12  
T
= 25_C  
= 70_C  
25  
20  
19  
13  
A
a
Continuous Drain Current (T = 150__C)  
I
D
J
T
A
Pulsed Drain Current (10 ms Pulse Width)  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
70  
40  
A
DM  
a
I
S
2.9  
1.3  
L = 0.1 mH  
I
AS  
T
= 25_C  
= 70_C  
3.5  
2.2  
1.6  
1
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
29  
67  
13  
35  
80  
16  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Foot (Drain)  
thJF  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72918  
S-40854—Rev. A, 03-May-04  
www.vishay.com  
1

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