Datasheet > SI4378DY

SI4378DY

更新时间： 2024-09-26 21:53:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	57K
描述
N-Channel 20-V (D-S) MOSFET

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中文翻译

获取价格

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SI4378DY 数据手册

Si4378DY

Vishay Siliconix

New Product

N-Channel 20-V (D-S) MOSFET

FEATURES

D Ultra Low On-Resistance Using High Density

PRODUCT SUMMARY

TrenchFETr Gen II Power MOSFET Technology

D Q_gOptimized

V_DS(V)

r_DS(on)(W)

I_D(A)

D 100% R_gTested

APPLICATIONS

0.0027 @ V = 4.5 V

0.0042 @ V = 2.5 V

D Synchronous Rectification

D Point-Of-Load

SO-8

Top View

Ordering Information: Si4378DY—E3

Si4378DY-T1—E3 (with Tape and Reel)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 70_C

Continuous Drain Current (T = 150__C)

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

Avalanche Current

2.9

1.3

L = 0.1 mH

= 25_C

= 70_C

3.5

2.2

1.6

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72918

S-40854—Rev. A, 03-May-04

www.vishay.com

12 3 4 5

中文翻译

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