Datasheet > SI4364DY

SI4364DY

更新时间： 2024-02-21 07:35:48

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	40K
描述
N-Channel 30-V (D-S) MOSFET

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SI4364DY 数据手册

Si4364DY

Vishay Siliconix

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

PRODUCT SUMMARY

D Optimized for “Low Side” Synchronous

Rectifier Operation

V_DS(V)

r_DS(on)(W)

I_D(A)

D 100% R_GTested

APPLICATIONS

0.0045 @ V = 10 V

0.0055 @ V = 4.5 V

D DC/DC Converters

D Synchronous Rectifiers

SO-8

Top View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"16

= 25_C

= 70_C

Continuous Drain Current (T = 150__C)

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

2.9

3.5

2.2

1.3

1.6

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 70680

S-03662—Rev. C, 14-Apr-03

www.vishay.com

2-1

12 3 4

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