Datasheet > SI4364DY-T1-GE3

SI4364DY-T1-GE3

更新时间： 2024-09-27 21:21:47

品牌	Logo	应用领域
威世 - VISHAY		光电二极管
页数	文件大小	规格书
5页	97K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SI4364DY-T1-GE3 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code：	unknown	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	13 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	3.5 W
子类别：	FET General Purpose Powers	表面贴装：	YES
Base Number Matches：	1

SI4364DY-T1-GE3 数据手册

Si4364DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Available

TrenchFET^®Power MOSFET

Optimized for “Low Side” Synchronous

Rectifier Operation

0.0045 at V_GS= 10 V

0.0055 at V_GS= 4.5 V

•

100 % R_gTested

APPLICATIONS

•

DC/DC Converters

SO-8

•

Synchronous Rectifiers

Top View

N-Channel MOSFET

Ordering Information:

Si4364DY-T1-E3 (Lead (Pb)-free)

Si4364DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source Current (Diode Conduction)^a

2.9

3.5

2.2

1.3

1.6

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

Steady State

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 70680

S09-0221-Rev. E, 09-Feb-09

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与SI4364DY-T1-GE3相关器件

型号	品牌	获取价格	描述	数据表
SI4366DY	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI4366DY-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI4368DY	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching WFET
SI4368DY-E3	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching WFET
SI4368DY-T1-E3	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching WFET
SI4368DY-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
SI4370DY	VISHAY	获取价格	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4370DY-T1	VISHAY	获取价格	TRANSISTOR 5700 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET Genera
SI4376DY	VISHAY	获取价格	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4376DY-T1	VISHAY	获取价格	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode