是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | HTS代码: | 8542.39.00.01 |
风险等级: | 5.65 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电信集成电路类型: | TELECOM CIRCUIT | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4362BDY |
获取价格 |
N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET |
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SI4362BDY-RC | VISHAY |
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R-C Thermal Model Parameters |
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SI4362BDY-T1-E3 | VISHAY |
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TRANSISTOR 19.8 A, 30 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, |
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SI4362BDY-T1-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, |
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SI4362-BXX-FM | SILICON |
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Telecom Circuit, 1-Func, LEAD FREE, MO-220VGGD-8, QFN-20 |
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SI4362DY | VISHAY |
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N-Channel 30-V (D-S) MOSFET |
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SI4362DY-E3 | VISHAY |
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N-Channel 30-V (D-S) MOSFET |
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SI4362DY-T1 | VISHAY |
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N-Channel 30-V (D-S) MOSFET |
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SI4362DY-T1E3 | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET |
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SI4362DY-T1-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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