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SI4362BDY-RC

更新时间： 2024-09-26 06:11:35

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威世 - VISHAY		/
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描述
R-C Thermal Model Parameters

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SI4362BDY-RC 数据手册

Si4362BDY_RC

Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient Thermal Impedance curves for the

MOSFET.

R-C values for the electrical circuit in the Foster/Tank

and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION

Thermal Resistance (°C/W)

Foot

206.8218 m

4.2280

Junction to

RT1

Ambient

2.3510

Case

N/A

RT2

22.3383

31.8527

23.4503

RT3

8.8272

RT4

5.6292

Thermal Capacitance (Joules/°C)

Foot

Junction to

CT1

Ambient

10.8671 m

48.7958 m

1.8249

Case

N/A

9.5541 m

CT2

133.6946 m

180.3975 m

12.3666 m

CT3

CT4

4.3203

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

Document Number: 73832

Revision 03-Mar-06

www.vishay.com

12 3

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