是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.88 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 12 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 3 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4356DY-E3 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
Si4362 | SILICON |
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Si4362 EZRadioPRO ISM 波段的频率范围为 142 到 1050 Hz。 | |
SI4362-B0B-FM | ETC |
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WIRELESS PRODUCT SELECTOR GUIDE | |
SI4362-B1B-FMR | SILICON |
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Telecom Circuit, | |
SI4362BDY |
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N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET | ||
SI4362BDY-RC | VISHAY |
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R-C Thermal Model Parameters | |
SI4362BDY-T1-E3 | VISHAY |
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TRANSISTOR 19.8 A, 30 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, | |
SI4362BDY-T1-GE3 | VISHAY |
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Power Field-Effect Transistor, | |
SI4362-BXX-FM | SILICON |
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Telecom Circuit, 1-Func, LEAD FREE, MO-220VGGD-8, QFN-20 | |
SI4362DY | VISHAY |
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N-Channel 30-V (D-S) MOSFET |