是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.92 | 最大漏极电流 (Abs) (ID): | 7.3 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 3 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4350DY-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI4350DY-T1 | VISHAY |
获取价格 |
TRANSISTOR 7300 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-14, FET Gener | |
SI4350DY-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 7300 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-14, FET Gener | |
SI4354DY | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI4354DY-E3 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI4354DY-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 9.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
SI4354DY-T1-GE3 | VISHAY |
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Small Signal Field-Effect Transistor, 9.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
SI4355 | SILICON |
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EASY-TO-USE, LOW-CURRENT OOK/(G)FSK SUB-GHZ RECEIVER | |
Si4356 | SILICON |
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Si4356 EZRadioPRO ISM 波段采用 QFN20 封装。 | |
SI4356ADY |
获取价格 |
N-Channel 30-V (D-S) MOSFET |