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SI4356ADY-T1-GE3 PDF预览

SI4356ADY-T1-GE3

更新时间: 2024-09-26 14:35:47
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 112K
描述
TRANSISTOR 17 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power

SI4356ADY-T1-GE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69Is Samacsys:N
雪崩能效等级(Eas):80 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):17 A
最大漏源导通电阻:0.0055 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):50 A
认证状态:Not Qualified表面贴装:YES
端子面层:Pure Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI4356ADY-T1-GE3 数据手册

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Si4356ADY  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
26  
Available  
TrenchFET® Power MOSFET  
100 % Rg Tested  
0.0055 at VGS = 10 V  
0.0068 at VGS = 4.5 V  
30  
30 nC  
23  
APPLICATIONS  
Buck Converter  
Synchronous Rectifier  
- Secondary Rectifier  
SO-8  
D
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
Ordering Information: Si4356ADY-T1-E3 (Lead (Pb)-free)  
Si4356ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
30  
Unit  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
12  
TC = 25 °C  
TC = 70 °C  
26  
21  
Continuous Drain Current (TJ = 150 °C)  
ID  
17b, c  
14b, c  
50  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
55  
2.7b, c  
40  
Continuous Source-Drain Diode Current  
T
A = 25 °C  
L = 0.1 mH  
C = 25 °C  
IAS  
EAS  
Single Pulse Avalanche Current  
Avalanche Energy  
mJ  
W
80  
T
6.5  
TC = 70 °C  
A = 25 °C  
TA = 70 °C  
4.2  
PD  
Maximum Power Dissipation  
3b, c  
2b, c  
T
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
Symbol  
RthJA  
RthJF  
Typical  
34  
Maximum  
Unit  
t 10 s  
Steady State  
41  
19  
°C/W  
15  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. Maximum under Steady State conditions is 80 °C/W.  
Document Number: 73475  
S09-0226-Rev. C, 09-Feb-09  
www.vishay.com  
1

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