Datasheet > SI4162DY

SI4162DY

更新时间： 2024-01-19 04:52:16

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威世 - VISHAY		/
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描述
N-Channel 30-V (D-S) MOSFET

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SI4162DY 数据手册

Si4162DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)

TrenchFET^®Power MOSFET

100 % R_gTested

RoHS

19.3^a

17.1^a

0.0079 at V_GS= 10 V

0.010 at V_GS= 4.5 V

COMPLIANT

8.8 nC

• 100 % UIS Tested

APPLICATIONS

•

DC/DC

- High Side

- VRM

SO-8

- POL

- Server

Top View

Ordering Information: Si4162DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

19.3^a

15.4

13.6^{b, c}

10.9^{b, c}

4.2^a

2.1^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current

Avalanche Current

Avalanche Energy

I_DM

I_AS

E_AS

L = 0.1 mH

_C= 25 °C

_A= 25 °C

Continuous Source-Drain Diode Current

I_S

T_C= 25 °C

_C= 70 °C

3.2

Maximum Power Dissipation

P_D

2.5^{b, c}

1.6^{b, c}

- 55 to 150

260

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

t ≤ 10 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 68967

S-82621-Rev. A, 03-Nov-08

www.vishay.com

12 3 4 5 6 7

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