Datasheet > SI4166DY

SI4166DY

更新时间： 2024-01-04 20:20:16

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	141K
描述
N-Channel 30-V (D-S) MOSFET

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Si4166DY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

30.5

TrenchFET^®Power MOSFET

RoHS

0.0039 at V_GS= 10 V

0.0055 at V_GS= 4.5 V

• 100 % R and UIS Tested

COMPLIANT

21.5 nC

25.6

APPLICATIONS

•

Low-Side DC/DC Conversion

- Notebook PC

- Gaming

SO-8

Top View

N-Channel MOSFET

Ordering Information: Si4166DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

_C= 25 °C

T_C= 70 °C

_A= 25 °C

30.5

24.5

20.5^{b, c}

16.5^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

5.9

2.7^{b, c}

Continuous Source-Drain Diode Current

_A= 25 °C

L = 0.1 mH

_C= 25 °C

I_AS

E_AS

Single Pulse Avalanche Current

Avalanche Energy

6.5

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

4.2

P_D

Maximum Power Dissipation

3.0^{b, c}

1.9^{b, c}

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

t ≤ 10 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 80 °C/W.

Document Number: 68953

S-82661-Rev. A, 03-Nov-08

www.vishay.com

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