5秒后页面跳转
SI4136-F-BTR PDF预览

SI4136-F-BTR

更新时间: 2024-11-19 20:37:31
品牌 Logo 应用领域
芯科 - SILICON 电信光电二极管电信集成电路
页数 文件大小 规格书
34页 733K
描述
RF and Baseband Circuit, PDSO24, TSSOP-24

SI4136-F-BTR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:TSSOP,
针数:24Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.74
JESD-30 代码:R-PDSO-G24JESD-609代码:e0
长度:7.8 mm湿度敏感等级:3
功能数量:1端子数量:24
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.2 mm标称供电电压:3 V
表面贴装:YES电信集成电路类型:RF AND BASEBAND CIRCUIT
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:4.4 mmBase Number Matches:1

SI4136-F-BTR 数据手册

 浏览型号SI4136-F-BTR的Datasheet PDF文件第2页浏览型号SI4136-F-BTR的Datasheet PDF文件第3页浏览型号SI4136-F-BTR的Datasheet PDF文件第4页浏览型号SI4136-F-BTR的Datasheet PDF文件第5页浏览型号SI4136-F-BTR的Datasheet PDF文件第6页浏览型号SI4136-F-BTR的Datasheet PDF文件第7页 
Si4136/Si4126  
ISM RF SYNTHESIZER WITH INTEGRATED VCOS  
FOR WIRELESS COMMUNICATIONS  
Features  
Dual-band RF synthesizers Minimal external components  
RF1: 2300 MHz to 2500 MHz  
RF2: 2025 MHz to 2300 MHz  
IF synthesizer  
required  
Low phase noise  
5 µA standby current  
25.7 mA typical supply current  
62.5 MHz to 1000 MHz  
Ordering Information:  
Integrated VCOs, loop filters, 2.7 V to 3.6 V operation  
See page 29.  
varactors, and resonators  
Packages: 24-pin TSSOP,  
28-lead QFN  
Lead-free/RoHS-compliant options  
available  
Pin Assignments  
Applications  
Si4136-BT/GT  
ISM and MMDS band  
communications  
Wireless LAN and WAN  
Dual-band communications  
SEN  
SCLK  
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
VDDI  
IFOUT  
GND  
SDATA  
GND  
GND  
NC  
2
3
Description  
4
IFLB  
The Si4136 is a monolithic integrated circuit that performs both IF and RF  
synthesis for wireless communications applications. The Si4136 includes  
three VCOs, loop filters, reference and VCO dividers, and phase detectors.  
Divider and powerdown settings are programmable through a three-wire  
serial interface.  
5
IFLA  
GND  
NC  
6
GND  
7
VDDD  
GND  
GND  
GND  
GND  
RFOUT  
VDDR  
8
9
Functional Block Diagram  
XIN  
10  
11  
12  
PWDN  
AUXOUT  
Reference  
÷1/÷2  
XIN  
÷RRF1  
÷RRF2  
÷RIF  
Phase  
Detect  
Amplifier  
RF1  
Power  
Down  
PWDN  
Si4136-BM/GM  
RFOUT  
÷NRF1  
÷NRF2  
÷NIF  
÷2  
Control  
SDATA  
SCLK  
Phase  
Detect  
Serial  
Interface  
RF2  
28 27 26 25 24 23  
22  
22-bit  
Data  
SEN  
GND  
GND  
NC  
1
2
3
4
5
6
7
21 GND  
20 IFLB  
19 IFLA  
18 GND  
17 VDDD  
16 GND  
15 XIN  
÷2  
Register  
Phase  
Detect  
Test  
Mux  
AUXOUT  
IFDIV  
IFOUT  
GND  
GND  
NC  
IF  
IFLA  
IFLB  
GND  
GND  
8
9
10 11 12 13 14  
Patents pending  
Rev. 1.4 1/06  
Copyright © 2006 by Silicon Laboratories  
Si4136/Si4126  

与SI4136-F-BTR相关器件

型号 品牌 获取价格 描述 数据表
SI4136-F-GM SILICON

获取价格

ISM RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS
SI4136-F-GMR SILICON

获取价格

RF and Baseband Circuit, ROHS COMPLIANT, QFN-28
SI4136-F-GT SILICON

获取价格

ISM RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS
SI4136-F-GTR SILICON

获取价格

RF and Baseband Circuit, PDSO24, ROHS COMPLIANT, TSSOP-24
Si4143DY VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
Si4151DY VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
Si4153DY VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
SI4154DY VISHAY

获取价格

N-Channel 40-V (D-S) MOSFET
SI4154DY-T1-GE3 VISHAY

获取价格

N-Channel 40-V (D-S) MOSFET
Si4155DY VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET