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SI3456DVD84Z PDF预览

SI3456DVD84Z

更新时间: 2024-11-30 15:51:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
5页 122K
描述
Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

SI3456DVD84Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.27配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):5.1 A
最大漏源导通电阻:0.045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI3456DVD84Z 数据手册

 浏览型号SI3456DVD84Z的Datasheet PDF文件第2页浏览型号SI3456DVD84Z的Datasheet PDF文件第3页浏览型号SI3456DVD84Z的Datasheet PDF文件第4页浏览型号SI3456DVD84Z的Datasheet PDF文件第5页 
October 2001  
Si3456DV  
N-Channel PowerTrenchMOSFET  
General Description  
Features  
These N-Channel Logic Level MOSFETs are produced  
using Fairchild Semiconductor’s advanced Power  
Trench process that has been especially tailored to  
minimize the on-state resistance and yet maintain  
superior switching performance.  
5.1 A, 30 V. RDS(ON) = 45 m@ VGS = 10 V  
RDS(ON) = 65 m@ VGS = 4.5 V  
High performance trench technology for extremely  
low RDS(ON)  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
Low gate charge (4.8 nC typical)  
High power and current handling capability  
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6  
D
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
30  
V
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
V
A
20  
5.1  
20  
(Note 1a)  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.6  
0.8  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
30  
RθJA  
RθJC  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
3000 units  
.456  
Si3456DV  
7’’  
8mm  
Si3456DV Rev A  
2001 Fairchild Semiconductor Corporation  

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