生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.27 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 5.1 A |
最大漏源导通电阻: | 0.045 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3456DV-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI3456DVS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
SI3456DV-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI3456DV-T1 | TEMIC |
获取价格 |
Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
SI3456DV-T1-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI3456DV-T2 | TEMIC |
获取价格 |
Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
SI3456DV-T2-E3 | TEMIC |
获取价格 |
Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
SI3456DV-T3 | TEMIC |
获取价格 |
Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
SI3456DV-T3-E3 | TEMIC |
获取价格 |
Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
SI3457BDV | VISHAY |
获取价格 |
P-Channel 30-V (D-S) MOSFET |