SI3457CDV

更新时间： 2024-11-30 09:26:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	139K
描述
P-Channel 30-V (D-S) MOSFET

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SI3457CDV 数据手册

New Product

Si3457CDV

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

- 5.1

0.074 at V_GS= - 10 V

0.113 at V_GS= - 4.5 V

APPLICATIONS

RoHS

- 30

5.1 nC

COMPLIANT

•

Load Switch

- 4.1

TSOP-6

Top View

(4) S

3 mm

(3) G

Marking Code

AT XXX

Lot Traceability

and Date Code

Part # Code

2.85 mm

(1, 2, 5, 6) D

Ordering Information: Si3457CDV-T1-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

- 30

Unit

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

- 5.1

- 4.1

Continuous Drain Current (T_J= 150 °C)

I_D

- 4.1^{b, c}

- 3.3^{b, c}

- 20

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

- 2.5

- 1.67^{b, c}

Continuous Source-Drain Diode Current

_C= 25 °C

3.0

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

2.0

P_D

Maximum Power Dissipation

2.0^{b, c}

1.3^{b, c}

T_J, T_stg

- 55 to 150

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

R_thJF

Typical

Maximum

62.5

Unit

t ≤ 5 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 110 °C/W.

Document Number: 68602

S-80894-Rev. A, 21-Apr-08

www.vishay.com

12 3 4 5 6 7

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