SI3460BDV

更新时间： 2024-12-01 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	116K
描述
N-Channel 20-V (D-S) MOSFET

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SI3460BDV 数据手册

Si3460BDV

Vishay Siliconix

New Product

N-Channel 20-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

I_D(A)^a

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

0.027 at V_GS= 4.5 V

0.032 at V_GS= 2.5 V

0.040 at V_GS= 1.8 V

APPLICATIONS

RoHS

COMPLIANT

9 nC

•

Load Switch for Portable Applications

•

Load Switch for Low Voltage Bus

TSOP-6

Top View

(1, 2, 5, 6)

3 mm

Marking Code

AF XXX

Lot Traceability

and Date Code

(3)

Part # Code

2.85 mm

(4)

Ordering Information: Si3460BDV-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

8^a

Unit

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

7.1

Continuous Drain Current (T_J= 150 °C)

I_D

6.7^{b, c}

5.4^{b, c}

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

2.9

1.7^{b, c}

3.5

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

2.2

Maximum Power Dissipation

P_D

2^{b, c}

T_A= 25 °C

T_A= 70 °C

1.3^{b, c}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

T_J, T_stg

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

62.5

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

t ≤ 5 sec

Steady State

°C/W

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 sec.

d. Maximum under steady state conditions is 110 °C/W.

Document Number: 74412

S-70187-Rev. A, 29-Jan-07

www.vishay.com

12 3 4 5 6 7

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