SI3460DV-T1

更新时间： 2024-11-30 22:07:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	66K
描述
N-Channel 20-V (D-S) MOSFET

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数据手册

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SI3460DV-T1 数据手册

Si3460DV

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D 100% R_gTested

0.027 @ V = 4.5 V

6.8

6.3

5.7

0.032 @ V = 2.5 V

0.038 @ V = 1.8 V

TSOP-6

Top View

(1, 2, 5, 6) D

3 mm

(3) G

2.85 mm

(4) S

N-Channel MOSFET

Ordering Information: Si3460DV-T1

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

= 25_C

= 70_C

6.8

5.4

5.1

4.1

Continuous Drain Current (T = 150__C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

1.7

2.0

1.3

0.9

1.1

= 25_C

= 70_C

Maximum Power Dissipation

0.73

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71329

S-31725—Rev. b, 18-Aug-03

www.vishay.com

12 3 4

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