Datasheet > SI3465DV

SI3465DV

更新时间： 2024-11-16 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	100K
描述
P-Channel 20-V (D-S) MOSFET

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SI3465DV 数据手册

Si3465DV

Vishay Siliconix

New Product

P-Channel 20-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

APPLICATIONS

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

D Load Switch

0.080 @ V = −10 V

−4.0

−2.7

−20

− Notebook PC

− Game Machine

0.170 @ V = −4.5

TSOP-6

Top View

(4) S

(3) G

3 mm

(1, 2, 5, 6) D

2.85 mm

P-Channel MOSFET

Ordering Information: Si3465DV-T1—E3 (Lead Free)

Marking Code: 5C

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

"20

= 25_C

= 70_C

−3.0

−2.4

−4.0

−3.2

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−20

Continuous Source Current (Diode Conduction)

−1.7

2.0

−0.95

1.14

= 25_C

= 70_C

Maximum Power Dissipation

1.3

0.73

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72787

S-40410—Rev. A, 15-Mar-04

www.vishay.com

12 3 4 5 6

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