Datasheet > SI3477DV

SI3477DV

更新时间： 2024-09-30 09:26:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	225K
描述
P-Channel 12 V (D-S) MOSFET

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Si3477DV

Vishay Siliconix

P-Channel 12 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)^a

- 8

Q_g(Typ.)

Definition

0.0175 at V_GS= - 4.5 V

0.023 at V_GS= - 2.5 V

0.033 at V_GS= - 1.8 V

•

TrenchFET^®Power MOSFET

PWM Optimized

100 % R_gTested

- 12

28.3 nC

- 8

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch

DC/DC Converters

TSOP-6

Top View

(4) S

3 mm

(3) G

Marking Code

BB XXX

Lot Traceability

and Date Code

Part # Code

2.85 mm

(1, 2, 5, 6) D

Ordering Information: Si3477DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 12

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 8^a

_C= 25 °C

- 8^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

- 8^{a, b, c}

- 7.2^{b, c}

- 40

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

- 3.5

- 1.67^{b, c}

Continuous Source-Drain Diode Current

_C= 25 °C

4.2

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

2.7

Maximum Power Dissipation

P_D

2.0^{b, c}

1.3^{b, c}

- 55 to 150

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

62.5

Unit

t  5 s

Steady State

R_thJA

R_thJF

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 110 °C/W.

Document Number: 70865

S10-1536-Rev. A, 19-Jul-10

www.vishay.com

12 3 4 5 6 7...11

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