Si3474DV
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
MOSFET PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
I
D (A)a
VDS (V)
RDS(on) () Max.
0.126 at VGS = 10 V
0.147 at VGS = 6 V
0.189 at VGS = 4.5 V
Qg (Typ.)
100 % R and UIS Tested
Material categorization:
g
3.8
For definitions of compliance please see
www.vishay.com/doc?99912
100
3.5
2.9 nC
3.1
APPLICATIONS
• DC/DC Converters / Boost Converters
TSOP-6
Top View
•
•
•
Load Switch
LED Backlighting in LCD TVs
Power Management for Mobile
Computing
(1, 2, 5, 6)
D
D
D
1
2
3
6
5
3 mm
D
G
D
G
(3)
Marking Code
BF XX
S
4
(4)
S
Lot Traceability
and Date Code
2.85 mm
N-Channel MOSFET
Part # Code
Ordering Information:
Si3474DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
100
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
TC = 25 °C
3.8
T
C = 70 °C
A = 25 °C
3
ID
Continuous Drain Current (TJ = 150 °C)
2.8b, c
T
2.3b, c
14
TC = 70 °C
A
IDM
IS
Pulsed Drain Current (t = 100 µs)
TC = 25 °C
A = 25 °C
3
Continuous Source-Drain Diode Current
1.7b, c
T
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
2.5
L = 0.1 mH
EAS
mJ
W
0.31
TC = 25 °C
TC = 70 °C
TA = 25 °C
3.6
2.33
2b, c
PD
Maximum Power Dissipation
1.3b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Symbol
RthJA
Typical
50
Maximum
62.5
35
Unit
5 s
Steady State
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
28
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 62875
S13-1664-Rev. A, 29-Jul-13
www.vishay.com
1
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000