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SI3469DV_08 PDF预览

SI3469DV_08

更新时间: 2024-11-16 06:11:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 100K
描述
P-Channel 20-V (D-S) MOSFET

SI3469DV_08 数据手册

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Si3469DV  
Vishay Siliconix  
New Product  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
APPLICATIONS  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
D Load Switch  
Notebook PC  
Game Machine  
Desktop  
0.030 @ V = 10 V  
6.7  
5.1  
GS  
20  
0.051 @ V = 4.5  
V
GS  
TSOP-6  
Top View  
(4) S  
1
2
3
6
5
(3) G  
3 mm  
4
(1, 2, 5, 6) D  
2.85 mm  
Ordering Information: Si3469DV-T1—E3 (Lead Free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
5.0  
4.0  
6.7  
5.3  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
25  
a
Continuous Source Current (Diode Conduction)  
I
1.7  
2.0  
0.95  
1.14  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.3  
0.73  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
45  
90  
25  
62.5  
110  
30  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72676  
S-40271—Rev. A, 23-Feb-04  
www.vishay.com  
1
 

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