Datasheet > SI3481DV_06

SI3481DV_06

更新时间： 2024-09-30 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	100K
描述
P-Channel 30-V (D-S) MOSFET

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中文翻译

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数据手册

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SI3481DV_06 数据手册

Si3481DV

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

- 5.3

- 4.1

0.048 at V_GS= - 10 V

0.079 at V_GS= - 4.5 V

APPLICATIONS

RoHS

- 30

COMPLIANT

•

Load Switch

TSOP-6

Top View

(4) S

(3) G

3 mm

(1, 2, 5, 6) D

2.85 mm

P-Channel MOSFET

Ordering Information: Si3481DV-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 sec

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 30

V_GS

T_A= 25 °C

T_A= 70 °C

- 5.3

- 4.2

- 4.0

- 3.2

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

- 20

Continuous Source Current (Diode Conduction)^a

- 1.7

2.0

- 0.95

1.14

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 70 °C

1.3

0.73

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

62.5

Unit

t ≤ 5 sec

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

110

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

Document Number: 72105

S-60422-Rev. C, 20-Mar-06

www.vishay.com

12 3 4 5 6

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