Datasheet > SI3464DV

SI3464DV

更新时间： 2024-12-01 09:26:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	234K
描述
N-Channel 20-V (D-S) MOSFET

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SI3464DV 数据手册

New Product

Si3464DV

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^e

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

8^a

0.024 at V_GS= 4.5 V

0.028 at V_GS= 2.5 V

0.030 at V_GS= 1.8 V

•

8^a

11 nC

• Compliant to RoHS Directive 2002/95/EC

7.1

APPLICATIONS

•

DC/DC Converters

•

Load Switch for Portable Applications

TSOP-6

Top View

(1, 2, 5, 6)

3 mm

Marking Code

AZ XXX

Lot Traceability

and Date Code

(3)

Part # Code

2.85 mm

(4)

Ordering Information: Si3464DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

8^a

_C= 25 °C

_C= 70 °C

8^a

Continuous Drain Current (T_J= 150 °C)

I_D

7.5^{b, c}

6.0^{b, c}

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

T_A= 25 °C

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

Continuous Source-Drain Diode Current

1.7^{b, c}

3.6

2.3

Maximum Power Dissipation

P_D

2^{b, c}

1.3^{b, c}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

62.5

Unit

Maximum Junction-to-Ambient^{b, d}

t ≤ 5 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 110 °C/W.

e. Based on T_C= 25 °C.

Document Number: 65712

S10-0218-Rev. A, 25-Jan-10

www.vishay.com

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