SI3460DDV

更新时间： 2024-12-01 09:26:07

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威世 - VISHAY		/
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描述
N-Channel 20 V (D-S) MOSFET

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SI3460DDV 数据手册

Si3460DDV

Vishay Siliconix

N-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)^d

7.9

Q_g(Typ.)

Definition

0.028 at V_GS= 4.5 V

0.032 at V_GS= 2.5 V

0.038 at V_GS= 1.8 V

•

TrenchFET^®Power MOSFET

100 % R_gTested

100 % UIS Tested

6.7 nC

7.4

6.8

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

TSOP-6

Top View

•

DC/DC Converters

Boost Converters

Load Switch

(1, 2, 5, 6)

3 mm

Marking Code

BA XXX

Lot Traceability

(3)

and Date Code

Part # Code

(4)

2.85 mm

Ordering Information: Si3460DDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

7.9

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

6.3

Continuous Drain Current (T_J= 150 °C)

I_D

6.2^{a, b}

5.0^{a, b}

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

2.2

1.4^{a, b}

Continuous Source-Drain Diode Current

T_A= 25 °C

Avalanche Current

I_AS

Single Avalanche Energy

E_AS

3.2

_C= 25 °C

_C= 70 °C

2.7

1.7

Maximum Power Dissipation

P_D

1.7^{a, b}

1.1^{a, b}

T_A= 25 °C

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

Typical

Maximum

Unit

t ≤ 5 s

Steady State

R_thJA

R_thJF

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under steady state conditions is 120 °C/W.

d. Based on T_C= 25 °C.

Document Number: 66572

S10-0789-Rev. A, 05-Apr-10

www.vishay.com

12 3 4 5 6 7

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