Datasheet > SI3459DV-T1-GE3

SI3459DV-T1-GE3

更新时间： 2024-12-01 19:58:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	179K
描述
Small Signal Field-Effect Transistor,

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技术参数
数据手册

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SI3459DV-T1-GE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.64
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SI3459DV-T1-GE3 数据手册

Si3459DV

Vishay Siliconix

P-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Definition

TrenchFET^®Power MOSFET

Compliant to RoHS Directive 2002/95/EC

0.220 at V_GS= - 10 V

0.310 at V_GS= - 4.5 V

2.2

1.9

•

- 60

TSOP-6

Top View

(4) S

3 mm

(3) G

2.85 mm

(1, 2, 5, 6) D

Ordering Information:Si3459DV-T1-E3 (Lead (Pb)-free)

Si3459DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 60

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

_C= 70 °C

2.2

1.7

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

I_DM

I_AS

Pulsed Drain Current

- 7

Single Avalanche Current (L = 0.1 mH)

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^b

P_D

1.3

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

62.5

Maximum Junction-to-Ambient^a

Maximum Junction-to-Lead

106

°C/W

Steady State

R_thJL

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 5 s.

Document Number: 70877

S09-0765-Rev. D, 04-May-09

www.vishay.com

12 3 4 5 6 7...9

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