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SI3457DVL99Z PDF预览

SI3457DVL99Z

更新时间: 2024-11-30 15:51:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
5页 85K
描述
Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

SI3457DVL99Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.26Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):4 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI3457DVL99Z 数据手册

 浏览型号SI3457DVL99Z的Datasheet PDF文件第2页浏览型号SI3457DVL99Z的Datasheet PDF文件第3页浏览型号SI3457DVL99Z的Datasheet PDF文件第4页浏览型号SI3457DVL99Z的Datasheet PDF文件第5页 
April 2001  
PRELIMINARY  
Si3457DV  
Single P-Channel Logic Level PowerTrench MOSFET  
General Description  
Features  
This P-Channel Logic Level MOSFET is produced  
using Fairchild’s advanced PowerTrench process. It  
has been optimized for battery power management  
applications.  
–4 A, –30 V.  
RDS(ON) = 50 m@ VGS = –10 V  
RDS(ON) = 75 m@ VGS = –4.5 V  
Low gate charge  
Applications  
High performance trench technology for extremely  
low RDS(ON)  
Battery management  
Load switch  
Battery protection  
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6  
D
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
–30  
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
V
A
±25  
–4  
(Note 1a)  
–20  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.6  
W
0.8  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
30  
RθJA  
°C/W  
°C/W  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.457  
Si3457DV  
7’’  
8mm  
3000 units  
Si3457DV Rev A (W)  
2001 Fairchild Semiconductor Corporation  

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