SI3458BDV

更新时间： 2024-12-01 09:26:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	214K
描述
N-Channel 60-V (D-S) MOSFET

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SI3458BDV 数据手册

Si3458BDV

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^d

4.1

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

0.100 at V_GS= 10 V

0.128 at V_GS= 4.5 V

•

3.5 nC

3.6

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch for Portable Applications

LED Backlight Switch

DC/DC Converter

TSOP-6

Top View

(1, 2, 5, 6)

3 mm

Marking Code

AN XXX

Lot Traceability

and Date Code

(3)

Part # Code

2.85 mm

(4)

Ordering Information: Si3458BDV-T1-E3 (Lead (Pb)-free)

Si3458BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

4.1

3.2

3.2^{a, b}

2.5^{a, b}

2.9

1.7^{a, b}

3.3

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

2.1

Maximum Power Dissipation

P_D

2^{a, b}

T_A= 25 °C

T_A= 70 °C

1.3^{a, b}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

62.5

Unit

Maximum Junction-to-Ambient^{a, c}

Maximum Junction-to-Foot (Drain)

t ≤ 5 s

Steady State

°C/W

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under steady state conditions is 110 °C/W.

d. Based on T_C= 25 °C.

Document Number: 69501

S09-0660-Rev. B, 20-Apr-09

www.vishay.com

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