生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.26 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 0.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3457DV-T3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.3A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Me | |
SI3458BDV | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
SI3458BDV_09 | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
SI3458BDV-T1-E3 | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
SI3458BDV-T1-GE3 | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
SI3458DV | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
SI3458DV-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI3458DV-T1 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI3458DV-T1-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI3458DV-T-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |