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SI3457CDV-T1-E3 PDF预览

SI3457CDV-T1-E3

更新时间: 2024-11-30 09:26:11
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
7页 139K
描述
P-Channel 30-V (D-S) MOSFET

SI3457CDV-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:1.42Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:184117
Samacsys Pin Count:6Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:TSOP 6 LEAD
Samacsys Released Date:2015-05-24 21:47:42Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):5.1 A最大漏极电流 (ID):5.1 A
最大漏源导通电阻:0.074 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI3457CDV-T1-E3 数据手册

 浏览型号SI3457CDV-T1-E3的Datasheet PDF文件第2页浏览型号SI3457CDV-T1-E3的Datasheet PDF文件第3页浏览型号SI3457CDV-T1-E3的Datasheet PDF文件第4页浏览型号SI3457CDV-T1-E3的Datasheet PDF文件第5页浏览型号SI3457CDV-T1-E3的Datasheet PDF文件第6页浏览型号SI3457CDV-T1-E3的Datasheet PDF文件第7页 
New Product  
Si3457CDV  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
- 5.1  
0.074 at VGS = - 10 V  
0.113 at VGS = - 4.5 V  
APPLICATIONS  
RoHS  
- 30  
5.1 nC  
COMPLIANT  
Load Switch  
- 4.1  
TSOP-6  
Top View  
(4) S  
1
2
3
6
3 mm  
5
4
(3) G  
Marking Code  
AT XXX  
Lot Traceability  
and Date Code  
Part # Code  
2.85 mm  
(1, 2, 5, 6) D  
Ordering Information: Si3457CDV-T1-E3 (Lead (Pb)-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
Limit  
- 30  
20  
Unit  
V
VGS  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
- 5.1  
- 4.1  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 4.1b, c  
- 3.3b, c  
- 20  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
- 2.5  
- 1.67b, c  
Continuous Source-Drain Diode Current  
T
C = 25 °C  
3.0  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
2.0  
PD  
Maximum Power Dissipation  
W
2.0b, c  
1.3b, c  
TJ, Tstg  
- 55 to 150  
°C  
Operating Junction and Storage Temperature Range  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
Symbol  
RthJA  
RthJF  
Typical  
55  
Maximum  
62.5  
Unit  
t 5 s  
Steady State  
°C/W  
34  
41  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 110 °C/W.  
Document Number: 68602  
S-80894-Rev. A, 21-Apr-08  
www.vishay.com  
1

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