SI3457BDV-T1-E3

更新时间： 2024-11-29 22:15:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	69K
描述
P-Channel 30-V (D-S) MOSFET

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SI3457BDV-T1-E3 数据手册

Si3457BDV

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.054 @ V = −10 V

−5.0

−3.7

−30

0.100 @ V = −4.5

TSOP-6

Top View

(4) S

3 mm

(3) G

2.85 mm

(1, 2, 5, 6) D

P-Channel MOSFET

Ordering Information: Si3457BDV-T1

Si3457BDV-T1—E3 (Lead Free)

Marking Code:

7Bxxx

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−30

"20

= 25_C

= 70_C

−3.7

−3.0

−5.0

−4.0

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−20

Continuous Source Current (Diode Conduction)

−1.7

2.0

−0.95

1.14

= 25_C

= 70_C

Maximum Power Dissipation

1.3

0.73

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72019

S-40424—Rev. D, 15-Mar-04

www.vishay.com

12 3 4 5

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