Datasheet > SI3456DV-E3

SI3456DV-E3

更新时间： 2024-11-30 15:51:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	198K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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SI3456DV-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.82	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	5.1 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
湿度敏感等级：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

SI3456DV-E3 数据手册

SPICE Device Model Si3456DV

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

CHARACTERISTICS

• N-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the n-channel vertical DMOS. The subcircuit

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0-to-5V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C_gdmodel. All model parameter values are optimized

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 70509

07-May-01

www.vishay.com

12 3

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与SI3456DV-E3相关器件

型号	品牌	获取价格	描述	数据表
SI3456DVS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
SI3456DV-T1	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI3456DV-T1	TEMIC	获取价格	Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
SI3456DV-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI3456DV-T2	TEMIC	获取价格	Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
SI3456DV-T2-E3	TEMIC	获取价格	Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
SI3456DV-T3	TEMIC	获取价格	Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
SI3456DV-T3-E3	TEMIC	获取价格	Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
SI3457BDV	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI3457BDV-E3	VISHAY	获取价格	TRANSISTOR 3700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose

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