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SI3434DV PDF预览

SI3434DV

更新时间: 2024-11-20 22:33:51
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
4页 39K
描述
N-Channel 30-V (D-S) MOSFET

SI3434DV 技术参数

是否无铅: 含铅生命周期:Transferred
零件包装代码:TSOP包装说明:,
针数:6Reach Compliance Code:unknown
风险等级:5.04Is Samacsys:N
Base Number Matches:1

SI3434DV 数据手册

 浏览型号SI3434DV的Datasheet PDF文件第2页浏览型号SI3434DV的Datasheet PDF文件第3页浏览型号SI3434DV的Datasheet PDF文件第4页 
Si3434DV  
Vishay Siliconix  
New Product  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D 2.5-V Rating for 30-V N-Channel  
VDS (V)  
rDS(on) (W)  
ID (A)  
D Low rDS(on) for Footprint Area  
APPLICATIONS  
0.034 @ V = 4.5 V  
6.1  
5.0  
GS  
30  
0.050 @ V = 2.5 V  
GS  
D Li-lon Battery Protection  
(1, 2, 5, 6) D  
TSOP-6  
Top View  
1
2
3
6
5
(3) G  
3 mm  
4
(4) S  
2.85 mm  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"12  
T
= 25_C  
= 70_C  
6.1  
4.9  
4.6  
3.6  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
30  
DM  
a
Continuous Source Current (Diode Conduction)  
I
1.7  
2.0  
1.3  
1.0  
S
T
= 25_C  
= 70_C  
1.14  
0.73  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
40  
90  
25  
62.5  
110  
30  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71610  
S-03617—Rev. A, 17-Apr-01  
www.vishay.com  
1

SI3434DV 替代型号

型号 品牌 替代类型 描述 数据表
SI3434DV-T1-GE3 VISHAY

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SI3434DV-T1-E3 VISHAY

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TRANSISTOR 4600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET

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