SI3434DV

更新时间： 2024-09-15 22:33:51

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
4页	39K
描述
N-Channel 30-V (D-S) MOSFET

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中文翻译

获取价格

技术参数
数据手册
替代型号

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SI3434DV 技术参数

是否无铅：	含铅	生命周期：	Transferred
零件包装代码：	TSOP	包装说明：	,
针数：	6	Reach Compliance Code：	unknown
风险等级：	5.04	Is Samacsys：	N
Base Number Matches：	1

SI3434DV 数据手册

Si3434DV

Vishay Siliconix

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

PRODUCT SUMMARY

D 2.5-V Rating for 30-V N-Channel

V_DS(V)

r_DS(on)(W)

I_D(A)

D Low r_DS(on)for Footprint Area

APPLICATIONS

0.034 @ V = 4.5 V

6.1

5.0

0.050 @ V = 2.5 V

D Li-lon Battery Protection

(1, 2, 5, 6) D

TSOP-6

Top View

(3) G

3 mm

(4) S

2.85 mm

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 70_C

6.1

4.9

4.6

3.6

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

1.7

2.0

1.3

1.0

= 25_C

= 70_C

1.14

0.73

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71610

S-03617—Rev. A, 17-Apr-01

www.vishay.com

12 3 4

中文翻译

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SI3434DV 替代型号

型号	品牌	替代类型	描述	数据表
SI3434DV-T1-GE3	VISHAY	功能相似	TRANSISTOR 4600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL
SI3434DV-T1-E3	VISHAY	功能相似	TRANSISTOR 4600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET

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