SI3441

更新时间： 2024-09-15 22:33:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	85K
描述
P-Channel 2.5V Specified PowerTrench MOSFET

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数据手册

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SI3441 数据手册

April 2001

PRELIMINARY

Si3441DV

P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET uses

Fairchild’s low voltage PowerTrench process. It has

been optimized for battery power management

applications.

• –3.5 A, –20 V. R_DS(ON)= 80 mΩ @ V_GS= –4.5 V

_DS(ON)= 110 mΩ @ V_GS= –2.5 V

• Low gate charge

Applications

• High performance trench technology for extremely

low R_DS(ON)

• Battery management

• Load switch

• Battery protection

SuperSOT ^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±8

–3.5

(Note 1a)

–20

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.441

Si3441DV

7’’

8mm

3000 units

Si3441DV Rev A (W)

2001 Fairchild Semiconductor Corporation

12 3 4 5

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