Si3440ADV
Vishay Siliconix
www.vishay.com
N-Channel 150 V (D-S) MOSFET
FEATURES
• ThunderFET® power MOSFET
TSOP-6 Single
S
4
D
• 100 % Rg tested
5
D
6
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
3
G
APPLICATIONS
• DC/DC converters
• Boost converters
D
S
2
D
1
D
Top View
G
• LED backlighting
Marking code: BS
• PD switch
N-Channel MOSFET
• Load switch
PRODUCT SUMMARY
VDS (V)
150
0.380
0.432
1.65
R
DS(on) max. (Ω) at VGS = 10 V
DS(on) max. (Ω) at VGS = 4.5 V
R
Qg typ. (nC)
D (A) d
I
2.2
Configuration
Single
ORDERING INFORMATION
Package
TSOP-6
Si3440ADV-T1-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
150
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
T
C = 25 °C
C = 70 °C
2.2
1.7
Continuous drain current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
1.6 a, b
1.3 a, b
4
A
Pulsed drain current (t = 100 μs)
IDM
IS
TC = 25 °C
TA = 25 °C
3
Continuous source-drain diode current
1.7 a, b
Single pulse avalanche current
Single pulse avalanche energy
IAS
3
L = 0.1 mH
EAS
0.45
3.6
mJ
W
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
2.3
Maximum power dissipation
PD
2 a, b
1.3 a, b
-55 to +150
Operating junction and storage temperature range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a, c
SYMBOL
RthJA
TYPICAL
MAXIMUM
62.5
UNIT
t ≤ 10 s
Steady state
50
28
°C/W
Maximum junction-to-foot (drain)
RthJF
35
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. Maximum under steady state conditions is 110 °C/W
d. TC = 25 °C
S17-0904-Rev. B, 12-Jun-17
Document Number: 75594
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000