Datasheet > SI3440DV_08

SI3440DV_08

更新时间： 2024-11-06 06:11:31

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威世 - VISHAY		/
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描述
N-Channel 150-V (D-S) MOSFET

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SI3440DV_08 数据手册

Si3440DV

Vishay Siliconix

N-Channel 150-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)(Ω)

I_D(A)

1.5

•

PWM Optimized for Fast Switching In Small

Footprint

0.375 at V_GS= 10 V

0.400 at V_GS= 6.0 V

150

RoHS

1.4

COMPLIANT

•

100 % R_gTested

APPLICATIONS

•

Primary Side Switch for Low Power DC/DC Converters

(1, 2, 5, 6) D

TSOP-6

Top View

3 mm

(3) G

2.85 mm

Ordering Information: Si3440DV-T1-E3 (Lead (Pb)-free)

(4) S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

150

V_GS

T_A= 25 °C

T_A= 85 °C

1.5

1.1

1.2

0.8

Continuous Drain Current (T_J= 175 °C)^a

I_D

I_DM

I_AS

E_AS

I_S

Pulsed Drain Current

Single Avalanche Current

L = 0.1 mH

T_A= 25 °C

Single Avalanche Energy (Duty Cycle ≤ 1 %)

Continuous Source Current (Diode Conduction)^a

0.8

1.7

2.0

1.0

1.14

0.59

Maximum Power Dissipation^a

P_D

T_A= 85 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

62.5

Unit

t ≤ 5 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

110

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72380

S-82114-Rev. C, 08-Sep-08

www.vishay.com

12 3 4 5 6

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