SI3441BDV

更新时间： 2024-11-24 22:33:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	47K
描述
P-Channel 2.5-V (G-S) MOSFET

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中文翻译

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技术参数
数据手册

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SI3441BDV 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.81
配置：	Single	最大漏极电流 (Abs) (ID)：	2.45 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1.25 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

SI3441BDV 数据手册

Si3441BDV

Vishay Siliconix

New Product

P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.090 @ V = -4.5 V

-2.9

-20

0.130 @ V = -2.5

-2.45

(4) S

TSOP-6

Top View

(3) G

3 mm

(1, 2, 5, 6) D

2.85 mm

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-20

= 25_C

= 70_C

-2.45

-1.95

-2.9

Continuous Drain Current (T = 150_C)

-2.35

Pulsed Drain Current

-16

Continuous Diode Current (Diode Conduction)

-1.0

1.25

0.8

-0.72

0.86

0.55

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

120

100

145

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

For SPICE model information via the Worldwide Web: http://www. vishay.com/www/product/spice.htm.

Document Number: 72028

S-03669—Rev. B, 07-Apr-03

www.vishay.com

12 3 4 5

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