Datasheet > SI3441BDV_08

SI3441BDV_08

更新时间： 2024-09-16 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	94K
描述
P-Channel 2.5-V (G-S) MOSFET

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SI3441BDV_08 数据手册

Si3441BDV

Vishay Siliconix

P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.090 @ V = −4.5 V

−2.9

−20

0.130 @ V = −2.5

−2.45

TSOP-6

Top View

(4) S

(3) G

3 mm

2.85 mm

Ordering Information: Si3441BDV-T1

(1, 2, 5, 6) D

Si3441BDV-T1—E3 (Lead Free)

P-Channel MOSFET

Marking Code:

B1xxx

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

= 25_C

= 70_C

−2.45

−1.95

−2.9

Continuous Drain Current (T = 150_C)

−2.35

Pulsed Drain Current

−16

Continuous Diode Current (Diode Conduction)

−1.0

1.25

0.8

−0.72

0.86

= 25_C

= 70_C

Maximum Power Dissipation

0.55

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

120

100

145

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

For SPICE model information via the Worldwide Web: http://www. vishay.com/www/product/spice.htm.

Document Number: 72028

S-40424—Rev. C, 15-Mar-04

www.vishay.com

12 3 4 5 6

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