生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.13 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 3.5 A |
最大漏源导通电阻: | 0.08 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3441DV-E3 | VISHAY |
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Transistor | |
SI3441DVL99Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
SI3441DVS62Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
SI3441DV-T1 | VISHAY |
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P-Channel 2.5-V (G-S) MOSFET | |
SI3441DV-T1 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, Silicon, | |
SI3441DV-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 3.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
SI3441DV-T2 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, Silicon, | |
SI3441DV-T3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, Silicon | |
SI3441DV-T3 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, Silicon, | |
SI3442 | FAIRCHILD |
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N-Channel Logic Level Enhancement Mode Field Effect Transistor |