Datasheet > SI3442BDV_09

SI3442BDV_09

更新时间： 2022-03-29 08:01:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	183K
描述
N-Channel 2.5-V (G-S) MOSFET

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SI3442BDV_09 数据手册

Si3442BDV

Vishay Siliconix

N-Channel 2.5-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

4.2

Definition

0.057 at V_GS= 4.5 V

0.090 at V_GS= 2.5 V

•

TrenchFET^®Power MOSFET

Compliant to RoHS Directive 2002/95/EC

3.4

TSOP-6

Top View

(1, 2, 5, 6) D

3 mm

(3) G

2.85 mm

Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free)

(4) S

Si3442BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

Marking Code:

2Bxxx

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

4.2

3.4

3.0

2.4

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

1.4

0.72

0.86

0.55

T_A= 25 °C

T_A= 70 °C

1.67

1.07

Maximum Power Dissipation^a

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

100

Unit

t ≤ 5 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

120

145

°C/W

R_thJF

Note:

a. Surface Mounted on FR4 board, t ≤ 5 s.

Document Number: 72504

S09-2110-Rev. E, 12-Oct-09

www.vishay.com

12 3 4 5 6 7...9

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