Datasheet > SI3442DVD87Z

SI3442DVD87Z

更新时间： 2024-01-15 19:28:41

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关光电二极管晶体管
页数	文件大小	规格书
10页	230K
描述
Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

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SI3442DVD87Z 技术参数

生命周期：	Obsolete	零件包装代码：	SOT
包装说明：	SMALL OUTLINE, R-PDSO-G6	针数：	6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.26	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	4.1 A
最大漏源导通电阻：	0.06 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G6	元件数量：	1
端子数量：	6	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

SI3442DVD87Z 数据手册

March 2001

SI3442DV

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

4.1 A, 20 V. R_DS(ON)= 0.06 W @ V_GS= 4.5 V

_DS(ON)= 0.075 W @ V_GS=2.7 V.

These N-Channel logic level enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is tailored to minimize on-state resistance. These

devices are particularly suited for low voltage applications in

notebook computers, portable phones, PCMICA cards, and

other battery powered circuits where fast switching, and low

in-line power loss are needed in a very small outline surface

mount package.

Proprietary SuperSOT^TM-6 package design using copper

lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

____________________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise note

Symbol Parameter

SI3442DV

Drain-Source Voltage

V_DSS

V_GSS

I_D

Gate-Source Voltage - Continuous

Drain Current - Continuous

- Pulsed

4.1

(Note 1a)

Maximum Power Dissipation

1.6

P_D

(Note 1b)

(Note 1c)

0.8

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

SI3442DV Rev. A

12 3 4 5 6 7...10

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