SI3441ADV

更新时间： 2024-11-06 13:13:31

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SI3441ADV 数据手册

Si3441BDV

Vishay Siliconix

New Product

P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.090 @ V = -4.5 V

-2.9

-20

0.130 @ V = -2.5

-2.45

(4) S

TSOP-6

Top View

(3) G

3 mm

(1, 2, 5, 6) D

2.85 mm

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-20

= 25_C

= 70_C

-2.45

-1.95

-2.9

Continuous Drain Current (T = 150_C)

-2.35

Pulsed Drain Current

-16

Continuous Diode Current (Diode Conduction)

-1.0

1.25

0.8

-0.72

0.86

0.55

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

120

100

145

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

For SPICE model information via the Worldwide Web: http://www. vishay.com/www/product/spice.htm.

Document Number: 72028

S-03669—Rev. B, 07-Apr-03

www.vishay.com

12 3 4 5

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