Datasheet > SI3440DV

SI3440DV

更新时间： 2024-09-15 22:33:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
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描述
N-Channel 150-V (D-S) MOSFET

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SI3440DV 数据手册

Si3440DV

Vishay Siliconix

New Product

N-Channel 150-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

D PWM Optimized for Fast Switching In Small

PRODUCT SUMMARY

Footprint

D 100% R_gTested

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.375 @ V = 10 V

1.5

1.4

150

0.400 @ V = 6.0 V

D Primary Side Switch for Low Power DC/DC

Converters

(1, 2, 5, 6) D

TSOP-6

Top View

(3) G

3 mm

(4) S

2.85 mm

Ordering Information: Si3440DV-T1—E3

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

150

"20

= 25_C

= 85_C

1.5

1.1

1.2

0.8

Continuous Drain Current (T = 175_C)

Pulsed Drain Current

Single Avalanche Current

L = 0.1 mH

Single Avalanche Energy (Duty Cycle v1%)

Continuous Source Current (Diode Conduction)

0.8

1.7

2.0

1.0

= 25_C

= 85_C

1.14

0.59

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72380

S-32412—Rev. B, 24-Nov-03

www.vishay.com

12 3 4 5

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