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SI3440DV PDF预览

SI3440DV

更新时间: 2024-11-24 22:33:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 71K
描述
N-Channel 150-V (D-S) MOSFET

SI3440DV 数据手册

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Si3440DV  
Vishay Siliconix  
New Product  
N-Channel 150-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
D PWM Optimized for Fast Switching In Small  
PRODUCT SUMMARY  
Footprint  
D 100% Rg Tested  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.375 @ V = 10 V  
GS  
1.5  
1.4  
150  
0.400 @ V = 6.0 V  
GS  
D Primary Side Switch for Low Power DC/DC  
Converters  
(1, 2, 5, 6) D  
TSOP-6  
Top View  
1
2
3
6
5
(3) G  
3 mm  
4
(4) S  
2.85 mm  
Ordering Information: Si3440DV-T1—E3  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
150  
DS  
V
V
GS  
"20  
T
= 25_C  
= 85_C  
1.5  
1.1  
1.2  
0.8  
A
a
Continuous Drain Current (T = 175_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
6
4
DM  
Single Avalanche Current  
I
AS  
L = 0.1 mH  
Single Avalanche Energy (Duty Cycle v1%)  
Continuous Source Current (Diode Conduction)  
E
AS  
0.8  
mJ  
A
a
I
S
1.7  
2.0  
1.0  
1.0  
T
A
= 25_C  
= 85_C  
1.14  
0.59  
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
45  
90  
25  
62.5  
110  
30  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72380  
S-32412—Rev. B, 24-Nov-03  
www.vishay.com  
1

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