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SI3434DV-T1-E3 PDF预览

SI3434DV-T1-E3

更新时间: 2024-11-21 15:51:11
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
5页 92K
描述
TRANSISTOR 4600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal

SI3434DV-T1-E3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.29Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):4.6 A最大漏极电流 (ID):4.6 A
最大漏源导通电阻:0.034 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI3434DV-T1-E3 数据手册

 浏览型号SI3434DV-T1-E3的Datasheet PDF文件第2页浏览型号SI3434DV-T1-E3的Datasheet PDF文件第3页浏览型号SI3434DV-T1-E3的Datasheet PDF文件第4页浏览型号SI3434DV-T1-E3的Datasheet PDF文件第5页 
Si3434DV  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
6.1  
Definition  
0.034 at VGS = 4.5 V  
0.050 at VGS = 2.5 V  
TrenchFET® Power MOSFET  
2.5 V Rating for 30 V N-Channel  
Low RDS(on) for Footprint Area  
30  
5.0  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
Li-lon Battery Protection  
TSOP-6  
Top View  
(1, 2, 5, 6) D  
1
2
3
6
5
3 mm  
(3) G  
4
2.85 mm  
(4) S  
Ordering Information: Si3434DV-T1-E3 (Lead (Pb)-free)  
Si3434DV-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
30  
V
VGS  
12  
TA = 25 °C  
TA = 70 °C  
6.1  
4.9  
4.6  
3.6  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
1.7  
2.0  
1.3  
1.0  
TA = 25 °C  
TA = 70 °C  
1.14  
0.73  
Maximum Power Dissipationa  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
40  
Maximum  
62.5  
Unit  
t 5 s  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
90  
110  
°C/W  
RthJF  
25  
30  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 71610  
S09-0766-Rev. B, 04-May-09  
www.vishay.com  
1

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