Datasheet > SI3437DV

SI3437DV

更新时间： 2024-09-16 06:11:31

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威世 - VISHAY		/
页数	文件大小	规格书
7页	121K
描述
P-Channel 150-V (D-S) MOSFET

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SI3437DV 数据手册

Si3437DV

Vishay Siliconix

New Product

P-Channel 150-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

I_D(A)^a

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

0.75 at V_GS= - 10 V

0.79 at V_GS= - 6 V

- 1.4

- 1.3

RoHS

- 150

8 nC

COMPLIANT

APPLICATIONS

•

Active Clamp Circuits in DC/DC Power Supplies

TSOP-6

Top View

3 mm

Marking Code

XXX

Lot Traceability

and Date Code

Part # Code

2.85 mm

Ordering Information: Si3437DV-T1-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

- 150

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

- 1.4

- 1.1

Continuous Drain Current (T_J= 150 °C)

I_D

- 1.1^b,c

- 0.88^b,c

- 5

- 2.6

1.6^b,c

I_DM

I_S

Pulsed Drain Current

_C= 25 °C

_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

Avalanche Current

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

1.25

3.2

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

2.1

2^b,c

P_D

Maximum Power Dissipation

1.25^b,c

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot

Symbol

R_thJA

R_thJF

Typical

Maximum

62.5

Unit

t ≤ 5 sec

Steady State

°C/W

Notes:

a. T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 sec.

d. Maximum under Steady State conditions is 110 °C/W.

Document Number: 73899

S-62238–Rev. A, 06-Nov-06

www.vishay.com

12 3 4 5 6 7

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