Datasheet > SI3435DV-T1-E3

SI3435DV-T1-E3

更新时间： 2024-11-07 06:27:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	85K
描述
Small Signal Field-Effect Transistor, 4.8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6

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SI3435DV-T1-E3 数据手册

Si3435DV

Vishay Siliconix

P-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 6.3

- 5.3

- 4.4

Definition

0.036 at V_GS= - 4.5 V

0.050 at V_GS= - 2.5 V

0.073 at V_GS= - 1.8 V

•

TrenchFET^®Power MOSFETs

1.8 V Rated

Compliant to RoHS Directive 2002/95/EC

- 12

TSOP-6

Top View

(4) S

3 mm

(3) G

2.85 mm

(1, 2, 5, 6) D

Ordering Information: Si3435DV-T1-E3 (Lead (Pb)-free)

Si3435DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 12

V_GS

T_A= 25 °C

T_A= 85 °C

- 6.3

- 4.6

- 4.8

- 3.4

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

- 20

Continuous Diode Current (Diode Conduction)^a

- 1.7

2.0

- 0.9

1.1

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 85 °C

1.0

0.6

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

62.5

Unit

t ≤ 5 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

110

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 71318

S09-0766-Rev. C, 04-May-09

www.vishay.com

12 3 4 5 6

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