Datasheet > SI3437DV (KI3437DV)

SI3437DV (KI3437DV)

更新时间： 2024-09-17 18:09:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	2060K
描述
P-Channel MOSFET

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中文翻译

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数据手册

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SI3437DV (KI3437DV) 数据手册

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SMD Type

MOSFET

P-Channel MOSFET

SI3437DV (KI3437DV)

(

)

Unit: mm

SOT-23-6

+0.1

-0.1

0.4

■ Features

● V^{DS (V)}=-150V

● ID =-1.4 A (VGS =-10V)

● R^DS(ON)＜ 750mΩ (VGS =-10V)

● R^DS(ON)＜ 790mΩ (VGS =-6V)

+0.02

-0.02

0.15

+0.01

-0.01

+0.2

-0.1

1. Drain

2. Drain

3.Gate

4. Source

5. Drain

6. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-150

±20

-1.4

-1.1

-0.88

-5

Unit

Gate-Source Voltage

Tc = 25 °C

Tc = 70 °C

Continuous Drain Current (T

= 150 °C)

Ta = 25 °C (Note.1,2)

Ta = 70 °C (Note.1,2)

Pulsed Drain Current

Avalanche Current

L = 0.1 mH

Single-Pulse Avalanche Energy

1.25

3.2

Tc = 25 °C

Tc = 70 °C

2.1

Power Dissipation

Ta = 25 °C (Note.1,2)

Ta = 70 °C (Note.1,2)

t ≤ 5 s (Note.3)

Steady State

1.25

62.5

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

℃/W

150

℃

Junction Storage Temperature Range

stg

-55 to 150

Note.1: t = 5 s.

Note.2: Surface Mounted on 1" x 1" FR4 board.

Note.3: Maximum under Steady State conditions is 110 °C/W.

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