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SI3438DV-T1-GE3 PDF预览

SI3438DV-T1-GE3

更新时间: 2024-11-06 21:18:31
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
11页 218K
描述
Trans MOSFET N-CH 40V 5.5A 6-Pin TSOP T/R

SI3438DV-T1-GE3 技术参数

生命周期:Active零件包装代码:TSOP
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:1.55配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):7.4 A
最大漏极电流 (ID):7.4 A最大漏源导通电阻:0.0355 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-193AA
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.5 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI3438DV-T1-GE3 数据手册

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New Product  
Si3438DV  
Vishay Siliconix  
N-Channel 40-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
Definition  
TrenchFET® Power MOSFET  
Compliant to RoHS Directive 2002/95/EC  
0.0355 at VGS = 10 V  
0.0425 at VGS = 4.5 V  
7.4  
6.7  
40  
5.3 nC  
APPLICATIONS  
DC/DC Converter  
TSOP-6  
Top View  
D
D
D
S
1
2
3
6
D
(1, 2, 5, 6)  
3 mm  
D
G
5
4
Marking Code  
AW XXX  
Lot Traceability  
G
and Date Code  
(3)  
Part # Code  
2.85 mm  
(4)  
S
Ordering Information: Si3438DV-T1-E3 (Lead (Pb)-free)  
Si3438DV-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Limit  
40  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
7.4  
5.8  
5.5b, c  
4.4b, c  
20  
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
2.9  
1.6b,c  
TC = 25 °C  
TA = 25 °C  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
Continuous Source-Drain Diode Current  
3.5  
2.2  
2b,c  
PD  
Maximum Power Dissipation  
W
1.25b,c  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot  
Symbol  
RthJA  
RthJF  
Typical  
50  
Maximum  
Unit  
t 5 s  
Steady State  
62.5  
35  
°C/W  
28  
Notes:  
a. Based on 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 110 °C/W.  
Document Number: 68393  
S09-0766-Rev. B, 04-May-09  
www.vishay.com  
1

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